IAUZ40N06S5L050ATMA1 vs ISC011N03L5SATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N06S5L050ATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N06S5L050ATMA1 - 60V 90A 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5L050ATMA1 β Active
Specification Comparison
| Parameter | IAUZ40N06S5L050ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.47 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | [DATA_NEEDED: continuous drain current at Tc=25C] | β |
| Drain Current at T<sub>j</sub> | 90 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V | 5 mΞ© | β |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A | 6.4 mΞ© | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 2.2 V at 29 Β΅A | β |
| Total Gate Charge Q<sub>G</sub> | 28.2 nC | β |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) | 71 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TSDSON-8-33 (TSDSON-8) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (super-junction N-channel) | OptiMOS 5 trench MOSFET |
| Automotive Qualification | AEC-Q100 qualified | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 / StrongIRFET 30 V |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) @ Ta=25C | β | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | β | 100 A |
| Power Dissipation (PD) @ Ta=25C | β | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | β | 96 W |
| Operating Temperature | β | -55 C to +175 C (TJ) |
| Gate Drive | β | Logic-level compatible |
| MSL Level | β | 1 (per JEDEC J-STD-020) |