IAUZ40N06S5N050ATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil IAUZ40N06S5N050ATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUZ40N06S5N050ATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, TC) 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-State Resistance (RDS(on), typ) 5 mΩ at VGS=10 V —
Maximum Power Dissipation (PD) 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th), typ) 1.7 V —
Technology OptiMOS 5 (Trench) OptiMOS 5
Channel Type N-Channel Enhancement Mode —
Paket PG-TSDSON-8-33 (3.3 x 3.3 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Jumlah Pin 8 —
Tipe Mounting Surface Mount Surface Mount
Thermal Resistance (RthJC, max) [DATA_NEEDED: RthJC] —
Rentang Suhu Kerja -55C to +175C -55C to +150C
Automotive Qualification AEC-Q101 Qualified —
Status RoHS Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL level]
Packaging Tape & Reel —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W

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