IAUZ40N06S5N050ATMA1 vs BSC034N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N06S5N050ATMA1 disebabkan oleh Infineon dan BSC034N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ40N06S5N050ATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, TC) 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
On-State Resistance (RDS(on), typ) 5 mΩ at VGS=10 V —
Maximum Power Dissipation (PD) 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th), typ) 1.7 V —
Technology OptiMOS 5 (Trench) OptiMOS 5
Channel Type N-Channel Enhancement Mode —
Kemasan PG-TSDSON-8-33 (3.3 x 3.3 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Kiraan Pin 8 —
Jenis Pemasangan Surface Mount Surface Mount
Thermal Resistance (RthJC, max) [DATA_NEEDED: RthJC] —
Gambaran Suhu Operasi -55C to +175C -55C to +150C
Automotive Qualification AEC-Q101 Qualified —
Status RoHS Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL level]
Packaging Tape & Reel —
Polarity — N-Channel
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W

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