IPB017N10N5LFATMA1 vs BSC040N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB017N10N5LFATMA1 dari Infineon dan BSC040N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB017N10N5LFATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 Linear FET —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 5
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 180 A —
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Maximum Power Dissipation (PD) @ TC=25C 313 W —
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΩ (max) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/min/max]
Rentang Suhu Kerja -55C to +175C (junction) -55C to +150C
Paket / Case PG-TO263-7 (D2PAK-7), surface mount —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) —
Avalanche Rated Yes —
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) —
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Paket — PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

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