IPB017N10N5LFATMA1 vs BSC040N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB017N10N5LFATMA1 disebabkan oleh Infineon dan BSC040N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB017N10N5LFATMA1 BSC040N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 Linear FET —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide Semiconductor) OptiMOS 5
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ TC=25C 180 A —
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Maximum Power Dissipation (PD) @ TC=25C 313 W —
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΩ (max) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/min/max]
Gambaran Suhu Operasi -55C to +175C (junction) -55C to +150C
Kemasan / Case PG-TO263-7 (D2PAK-7), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited) —
Avalanche Rated Yes —
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) —
Maximum On-Resistance (RDS(on)) — 4 mOhm
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) max — 136 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 139 W
Kemasan — PG-TDSON-8-7 (SuperSO8 5x6) / TDSON EP-8
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Output Capacitance Reduction — Up to 44% vs previous generation
RDS(on) Reduction — Up to 43% vs previous generation
Automotive Qualification — AEC-Q101 (per Infineon OptiMOS 5 family)

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