IPB017N10N5LFATMA1 vs IPB020N10N5LFATMA1 Perbandingan

Perbandingan bersamaan detil IPB017N10N5LFATMA1 dari Infineon dan IPB020N10N5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB017N10N5LFATMA1 IPB020N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 Linear FET —
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) N-Channel Enhancement-Mode Power MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25C 180 A —
Continuous Drain Current (ID) @ TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Maximum Power Dissipation (PD) @ TC=25C 313 W —
Drain-Source On-Resistance (RDS(on)) @ VGS=10V 1.7 mΩ (max) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Rentang Suhu Kerja -55C to +175C (junction) -55 °C to +175 °C
Paket / Case PG-TO263-7 (D2PAK-7), surface mount —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) 1
Avalanche Rated Yes —
Linear-Mode (SOA) Optimized Yes (OptiMOS Linear FET) —
Product Family — OptiMOS 5 Linear FET
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (Tc) — 176 A
Silicon-Limited Drain Current — 289 A
Package-Limited Drain Current — 120 A
Pulsed Drain Current (VDS=56V, tp=10ms) — 10.2 A
On-State Resistance RDS(on) max — 2.0 mΩ
Total Power Dissipation (Tc) — 313 W
Paket — PG-TO263-3 (D2PAK)
Gate Threshold Voltage VGS(th) typ — 2.5 V
Marking Code — 020N10LF

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