IPB020N08N5ATMA1 vs IPB081N06L3GATMA1 Perbandingan

Perbandingan bersamaan detil IPB020N08N5ATMA1 dari Infineon dan IPB081N06L3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB020N08N5ATMA1 IPB081N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 3 (low-voltage power MOSFET)
Drain-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID) at Tc=25C 120 A 50 A
Pulsed Drain Current (IDM) 480 A [DATA_NEEDED: pulsed drain current rating]
Maximum RDS(on) at VGS=10V 2.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] 1.2 V min, 2.1 V typ, 2.6 V max
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (PD) at Tc=25C 300 W —
Suhu Hubung Kerja -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value, approx 0.5 C/W] —
Paket PG-TO263-3 (D2PAK-2) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated (EAS) [DATA_NEEDED: EAS value] —
Configuration Single N-channel, 3-pin (2+Tab) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] 1 (unlimited)
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Tipe Transistor — N-Channel MOSFET
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) at VGS=10V — 8.1 mOhm typical
Maximum Power Dissipation (Pd) at Tc=25C — 79 W
Rentang Suhu Kerja — -55 C to +175 C (junction)
Jumlah Pin — 3
Pin Configuration — Gate / Drain / Source (D2PAK standard)

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