IPB020N08N5ATMA1 vs IPB081N06L3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB020N08N5ATMA1 disebabkan oleh Infineon dan IPB081N06L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB020N08N5ATMA1 IPB081N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 3 (low-voltage power MOSFET)
Drain-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID) at Tc=25C 120 A 50 A
Pulsed Drain Current (IDM) 480 A [DATA_NEEDED: pulsed drain current rating]
Maximum RDS(on) at VGS=10V 2.0 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] 1.2 V min, 2.1 V typ, 2.6 V max
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (PD) at Tc=25C 300 W —
Suhu Hubungan Operasi -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC value, approx 0.5 C/W] —
Kemasan PG-TO263-3 (D2PAK-2) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rated (EAS) [DATA_NEEDED: EAS value] —
Configuration Single N-channel, 3-pin (2+Tab) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1 (unlimited)
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Jenis Transistor — N-Channel MOSFET
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) at VGS=10V — 8.1 mOhm typical
Maximum Power Dissipation (Pd) at Tc=25C — 79 W
Gambaran Suhu Operasi — -55 C to +175 C (junction)
Bilangan Pin — 3
Pin Configuration — Gate / Drain / Source (D2PAK standard)

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