IPB020N10N5LFATMA1 vs IPB017N10N5LFATMA1 Perbandingan

Perbandingan bersamaan detil IPB020N10N5LFATMA1 dari Infineon dan IPB017N10N5LFATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB020N10N5LFATMA1 IPB017N10N5LFATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET —
Technology N-Channel Enhancement-Mode Power MOSFET MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (Tc) 176 A —
Silicon-Limited Drain Current 289 A —
Package-Limited Drain Current 120 A —
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A —
On-State Resistance RDS(on) max 2.0 mΩ —
Total Power Dissipation (Tc) 313 W —
Paket PG-TO263-3 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C -55C to +175C (junction)
Gate Threshold Voltage VGS(th) typ 2.5 V —
Status RoHS Compliant Compliant
Level MSL 1 1 (unlimited)
Marking Code 020N10LF —
Series — OptiMOS 5 Linear FET
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 180 A
Continuous Drain Current (ID) @ TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Maximum Power Dissipation (PD) @ TC=25C — 313 W
Drain-Source On-Resistance (RDS(on)) @ VGS=10V — 1.7 mΩ (max)
Gate-Source Voltage (VGS) Max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Paket / Case — PG-TO263-7 (D2PAK-7), surface mount
Avalanche Rated — Yes
Linear-Mode (SOA) Optimized — Yes (OptiMOS Linear FET)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon