IPB020N10N5LFATMA1 vs IPB017N10N5LFATMA1 比較
詳細並排比較 IPB020N10N5LFATMA1 由 Infineon 與 IPB017N10N5LFATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΩ OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 ✓ 啟用中
規格比較
| 參數 | IPB020N10N5LFATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET | — |
| Technology | N-Channel Enhancement-Mode Power MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (Tc) | 176 A | — |
| Silicon-Limited Drain Current | 289 A | — |
| Package-Limited Drain Current | 120 A | — |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A | — |
| On-State Resistance RDS(on) max | 2.0 mΩ | — |
| Total Power Dissipation (Tc) | 313 W | — |
| 封裝 | PG-TO263-3 (D2PAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +175 °C | -55C to +175C (junction) |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | 1 (unlimited) |
| Marking Code | 020N10LF | — |
| Series | — | OptiMOS 5 Linear FET |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| 封裝 / 外殼 | — | PG-TO263-7 (D2PAK-7), surface mount |
| Avalanche Rated | — | Yes |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |