IPB020NE7N3GATMA1 vs BSC042NE7NS3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB020NE7N3GATMA1 dari Infineon dan BSC042NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 75 V |
| Continuous Drain Current (ID) at Tc | 120 A | 100 A |
| Power Dissipation (PD) at Tc | 300 W | 125 W |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| Paket | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |