IPB020NE7N3GATMA1 vs BSC042NE7NS3GATMA1 比較
詳細並排比較 IPB020NE7N3GATMA1 由 Infineon 與 BSC042NE7NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 75 V | 75 V |
| Continuous Drain Current (ID) at Tc | 120 A | 100 A |
| Power Dissipation (PD) at Tc | 300 W | 125 W |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) | — |
| 封裝 | PG-TO263-3 (D²PAK, TO-263AB) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single | — |
| 工作溫度範圍 | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |