IPB025N10N3GATMA1 vs IPB039N10N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB025N10N3GATMA1 dari Infineon dan IPB039N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ AktifInfineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB025N10N3GATMA1 | IPB039N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| Paket | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-7 (D2PAK-7, 6 leads + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C |
| Technology | OptiMOS 3 trench MOSFET | MOSFET (Metal Oxide) |
| Level MSL | 1 (unlimited) | 1 |
| Status RoHS | Compliant | — |
| Bebas Halogen | Yes | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 160 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | — | 214 W |
| On-State Resistance RDS(on) at VGS=10V (typ) | — | 3.9 mOhm |
| Gate-Source Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd typ] |
| RoHS / Halogen-Free Status | — | RoHS compliant, halogen-free |
| Series / Family | — | OptiMOS 3 |