IPB025N10N3GATMA1 vs IPB039N10N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB025N10N3GATMA1 sa pamamagitan ng Infineon at IPB039N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPB025N10N3GATMA1 IPB039N10N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 180 A —
Power Dissipation (PD) at Tc 300 W —
RDS(on) Typical at VGS=10V, ID=100A 2.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3.5 V —
Input Capacitance (Ciss) 2.58 nF —
Gate Charge (Qg) Typical [DATA_NEEDED: Qg value] —
Packhaging PG-TO263-7 (D2PAK-7) 6+Tab PG-TO263-7 (D2PAK-7, 6 leads + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C
Technology OptiMOS 3 trench MOSFET MOSFET (Metal Oxide)
Level ng MSL 1 (unlimited) 1
Tindminan RoHS Compliant —
Wala sa Halogen Yes —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 160 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C — 214 W
On-State Resistance RDS(on) at VGS=10V (typ) — 3.9 mOhm
Gate-Source Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd typ]
RoHS / Halogen-Free Status — RoHS compliant, halogen-free
Series / Family — OptiMOS 3

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