IPB027N10N3GATMA1 vs BSC070N10NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IPB027N10N3GATMA1 dari Infineon dan BSC070N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB027N10N3GATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A | — |
| Power Dissipation (PD) at TC=25°C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΩ | — |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | 20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | [DATA_NEEDED: typical VGS(th) value] |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | — |
| Paket | PG-TO263-3 (D2PAK) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: exact °C/W value] | — |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | [DATA_NEEDED: typical Qg] |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| Rentang Suhu Hubung Kerja | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |