IPB031N08N5ATMA1 vs IPB020N08N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB031N08N5ATMA1 dari Infineon dan IPB020N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPB020N08N5ATMA1 IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 - 80V 2mOhm OptiMOS 5 N-FET | Infineon

IPB020N08N5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPB031N08N5ATMA1 IPB020N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) 120 A (Tc) —
Power Dissipation (PD) Max 167 W (Tc) —
On-Resistance (RDS(on)) Max 3.1 mOhm (VGS=10V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] [DATA_NEEDED: Qg value]
Rentang Suhu Kerja -55 C to +175 C —
Paket PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK-2)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source + Tab) —
Tab Connection Drain (electrically connected to pin) —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Automotive Qualified Yes (per Arrow listing) —
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Tc=25C — 120 A
Pulsed Drain Current (IDM) — 480 A
Maximum RDS(on) at VGS=10V — 2.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at Tc=25C — 300 W
Suhu Hubung Kerja — -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value, approx 0.5 C/W]
Avalanche Energy Rated (EAS) — [DATA_NEEDED: EAS value]
Configuration — Single N-channel, 3-pin (2+Tab)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon