IPB031N08N5ATMA1 vs IPB020N08N5ATMA1 Comparison
Detailed side-by-side comparison of IPB031N08N5ATMA1 by Infineon and IPB020N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB031N08N5ATMA1 - 80V 120A OptiMOS 5 N-Channel MOSFET | Infineon
IPB031N08N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB031N08N5ATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.62 | $1.45 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID) | 120 A (Tc) | β |
| Power Dissipation (PD) Max | 167 W (Tc) | β |
| On-Resistance (RDS(on)) Max | 3.1 mOhm (VGS=10V) | β |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg value] |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source + Tab) | β |
| Tab Connection | Drain (electrically connected to pin) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Automotive Qualified | Yes (per Arrow listing) | β |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc=25C | β | 120 A |
| Pulsed Drain Current (IDM) | β | 480 A |
| Maximum RDS(on) at VGS=10V | β | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation (PD) at Tc=25C | β | 300 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | β | [DATA_NEEDED: EAS value] |
| Configuration | β | Single N-channel, 3-pin (2+Tab) |