IPB038N12N3GATMA1 vs IPB072N15N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPB038N12N3GATMA1 dari Infineon dan IPB072N15N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB038N12N3GATMA1 IPB072N15N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 120V —
FET Type N-Channel N-Channel
Drain-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) @ Tc 120 A —
Power Dissipation (Pd) @ Tc 300 W —
On-State Resistance (Rds(on)) 3.8 mOhm (typical) —
Paket / Case PG-TO263-3 (D2PAK) —
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS trench MOSFET OptiMOS 3 (trench MOSFET)
Gate Drive Logic-level compatible —
Rentang Suhu Kerja -55C to +175C (junction) -55 C to +175 C
Standard Package Quantity 1000 (Tape & Reel) —
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Drain-Source Voltage (V_DS) — 150 V
Continuous Drain Current (I_D, Tc=25C) — 100 A
Continuous Drain Current (I_D, Tc=100C) — [DATA_NEEDED: I_D at Tc=100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed I_DM]
Maximum Power Dissipation (P_D, Tc=25C) — 300 W
R_DS(on) typical at VGS=10V — 7.2 mOhm
R_DS(on) max at VGS=10V — [DATA_NEEDED: max R_DS(on) at VGS=10V]
Gate-Source Voltage (V_GS) max — +/-20 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g typical at VGS=10V]
Paket — PG-TO263-3-2 (D2PAK-2, 3 pins + tab)
Avalanche Energy Rated — Yes (single-pulse E_AS)
Intrinsic Body Diode — Yes (low Q_rr, sync-rectifier capable)
Manufacturer Ordering Code Suffix — GATMA1 (tape and reel, 1000 pcs)

Spek dan Sumber

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