IPB60R165CPATMA1 vs IPD60R145CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPB60R165CPATMA1 dari Infineon dan IPD60R145CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R165CPATMA1 IPD60R145CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS CP (superjunction, N-Channel) CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 21 A —
Power Dissipation (PD, Tc=25°C) 192 W —
On-Resistance RDS(on), max (VGS=10V) 165 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Operating Temperature Range (TJ) -55°C to +150°C —
Paket PG-TO263-3-2 (D2PAK-2) TO-252AA (DPAK) surface mount
Tipe Mounting Surface Mount Surface Mount (DPAK, 3-pin + tab)
Status RoHS Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications —
dv/dt Ruggedness Extreme dv/dt rated —
Polarity / Channel N-Channel —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Suhu Kerja — -55C to +150C (junction)
Jumlah Pin — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
Level MSL — [DATA_NEEDED: MSL rating]
Target Application — ZVS / LLC resonant converters, soft switching

Spek dan Sumber

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