IPB60R165CPATMA1 vs IPD60R145CFD7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R165CPATMA1 sa pamamagitan ng Infineon at IPD60R145CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IPB60R165CPATMA1 IPD60R145CFD7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology CoolMOS CP (superjunction, N-Channel) CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 21 A —
Power Dissipation (PD, Tc=25°C) 192 W —
On-Resistance RDS(on), max (VGS=10V) 165 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Operating Temperature Range (TJ) -55°C to +150°C —
Packhaging PG-TO263-3-2 (D2PAK-2) TO-252AA (DPAK) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount (DPAK, 3-pin + tab)
Tindminan RoHS Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications —
dv/dt Ruggedness Extreme dv/dt rated —
Polarity / Channel N-Channel —
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Temperature na Operasyon — -55C to +150C (junction)
Bilang ng Pin — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
Level ng MSL — [DATA_NEEDED: MSL rating]
Target Application — ZVS / LLC resonant converters, soft switching

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita