IPC100N04S51R7ATMA1 vs IPC100N04S5L1R1ATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S51R7ATMA1 dari Infineon dan IPC100N04S5L1R1ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPC100N04S51R7ATMA1 IPC100N04S5L1R1ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
Tipe Transistor N-Channel MOSFET, Enhancement Mode N-Channel Enhancement Mode
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] Logic Level
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (SS08 leadless)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260 °C peak reflow) MSL1 (unlimited floor life, 260 °C peak reflow)
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested 100% avalanche tested
Status RoHS Compliant (Green Product) —
Built-in Body Diode Yes —
Product Family — OptiMOS-5 40 V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC — 100 A
On-Resistance RDS(on) max — 1.1 mΩ
Power Dissipation (PD) at TC — 150 W
Rentang Suhu Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Green Product (RoHS compliant)

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