IPC100N04S5L1R1ATMA1 vs IPC70N04S5L4R2ATMA1 Perbandingan

Perbandingan bersamaan detil IPC100N04S5L1R1ATMA1 dari Infineon dan IPC70N04S5L4R2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC100N04S5L1R1ATMA1 IPC70N04S5L4R2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-5 40 V —
Tipe Transistor N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (up to 260°C peak reflow)
Automotive Qualification AEC-Q101 qualified AEC-Q101
Avalanche Tested 100% avalanche tested 100% (60 A production test)
RoHS Compliance Green Product (RoHS compliant) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
Status RoHS — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

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