IPC100N04S5L1R1ATMA1 vs IPC70N04S5L4R2ATMA1 比較

詳細並排比較 IPC100N04S5L1R1ATMA1 由 Infineon 與 IPC70N04S5L4R2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC100N04S5L1R1ATMA1 IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 - 40V 100A OptiMOS-5 N-Channel MOSFET | Infineon

IPC100N04S5L1R1ATMA1 ✓ 啟用中
Infineon
IPC70N04S5L4R2ATMA1 IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon

IPC70N04S5L4R2ATMA1 ✓ 啟用中

規格比較

參數 IPC100N04S5L1R1ATMA1 IPC70N04S5L4R2ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Product Family OptiMOS-5 40 V —
電晶體類型 N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC 100 A —
On-Resistance RDS(on) max 1.1 mΩ —
Power Dissipation (PD) at TC 150 W —
Gate Threshold Voltage VGS(th) Logic Level —
工作溫度範圍 -55 °C to +175 °C —
封裝 PG-TDSON-8-34 (SS08 leadless) PG-TDSON-8-34 (Surface Mount)
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (unlimited floor life, 260 °C peak reflow) MSL1 (up to 260°C peak reflow)
Automotive Qualification AEC-Q101 qualified AEC-Q101
Avalanche Tested 100% avalanche tested 100% (60 A production test)
RoHS Compliance Green Product (RoHS compliant) —
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ Tc=25°C — 70 A
Power Dissipation (Pd) @ Tc=25°C — 50 W
R_DS(on) Max @ Vgs=10V — 4.2 mΩ (typ)
Gate Threshold (Vgs(th)) — Logic Level (4.5 V max Rds On, Min Rds On)
Drive Voltage (Max Rds On, Min Rds On) — 4.5 V
Operating Temperature (Tj) — -55°C to +175°C
RoHS 狀態 — Compliant (Green Product)
Configuration — Single with Built-in Diode
Case Connection — DRAIN

資料表與資源

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