IPC70N04S5L4R2ATMA1 vs IPB100N04S4H2ATMA1 Perbandingan

Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan IPB100N04S4H2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC70N04S5L4R2ATMA1 IPB100N04S4H2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) OptiMOS-T2 (trench gate)
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TO263-3-2 (D2PAK-2) Surface Mount
Operating Temperature (Tj) -55°C to +175°C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) MSL1 (up to 260C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100% (60 A production test) —
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
Suhu Hubung Kerja — -55C to +175C
Storage Temperature — [DATA_NEEDED: storage temp range]
Avalanche Energy (EAS) — 100% avalanche tested
RoHS Compliance — Compliant (Green Product)

Spek dan Sumber

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