IPC70N04S5L4R2ATMA1 vs IPB120N04S402ATMA1 Perbandingan

Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan IPB120N04S402ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC70N04S5L4R2ATMA1 IPB120N04S402ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TO263-3 (D2PAK)
Operating Temperature (Tj) -55°C to +175°C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100% (60 A production test) —
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, TC) — 120 A
Power Dissipation (PD, TC) — 158 W
RDS(on) (typ @ VGS=10 V) — 1.8 mΩ
Jumlah Pin — 3 (2 + Tab)
Rentang Suhu Kerja — -55 °C to +175 °C
Maximum Junction Temperature — 175 °C
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge]
Avalanche Energy Rating — 100% Avalanche Tested
Tingkat Sensitivitas Kekeringan (MSL) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
RoHS Compliance — Green Product (RoHS compliant)

Spek dan Sumber

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