IPC70N04S5L4R2ATMA1 vs IPB120N04S402ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC70N04S5L4R2ATMA1 disebabkan oleh Infineon dan IPB120N04S402ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPC70N04S5L4R2ATMA1 IPB120N04S402ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Kemasan PG-TDSON-8-34 (Surface Mount) PG-TO263-3 (D2PAK)
Operating Temperature (Tj) -55°C to +175°C —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100% (60 A production test) —
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, TC) — 120 A
Power Dissipation (PD, TC) — 158 W
RDS(on) (typ @ VGS=10 V) — 1.8 mΩ
Kiraan Pin — 3 (2 + Tab)
Gambaran Suhu Operasi — -55 °C to +175 °C
Maximum Junction Temperature — 175 °C
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg, typ) — [DATA_NEEDED: total gate charge]
Avalanche Energy Rating — 100% Avalanche Tested
Tingkat sensitiviti Air Nama (MSL) — MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow)
RoHS Compliance — Green Product (RoHS compliant)

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