IPC90N04S5L3R3ATMA1 vs IPD90N04S403ATMA1 Perbandingan

Perbandingan bersamaan detil IPC90N04S5L3R3ATMA1 dari Infineon dan IPD90N04S403ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC90N04S5L3R3ATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V OptiMOS-T2
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
Suhu Hubung Kerja -55°C to +175°C -55C to +175C
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Paket PG-TDSON-8-34 (TDSON-8) PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) 100% avalanche-tested
RoHS Compliance Compliant (Green Product) Compliant (Green Package)
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Level MSL — MSL1 (peak reflow up to 260C)
AEC-Q101 Qualification — Qualified (automotive grade)
Technology — Trench MOSFET (OptiMOS-T2)

Spek dan Sumber

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