IPC90N04S5L3R3ATMA1 vs IPD90N04S403ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC90N04S5L3R3ATMA1 sa pamamagitan ng Infineon at IPD90N04S403ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ NakahandaInfineon
IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon
IPD90N04S403ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC90N04S5L3R3ATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | OptiMOS-T2 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | -55C to +175C |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Packhaging | PG-TDSON-8-34 (TDSON-8) | PG-TO252-3-313 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | — |
| Avalanche Tested | 100% (production-level) | 100% avalanche-tested |
| RoHS Compliance | Compliant (Green Product) | Compliant (Green Package) |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Level ng MSL | — | MSL1 (peak reflow up to 260C) |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Technology | — | Trench MOSFET (OptiMOS-T2) |