IPC90N04S5L3R3ATMA1 vs IPD90N04S403ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC90N04S5L3R3ATMA1 disebabkan oleh Infineon dan IPD90N04S403ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPC90N04S5L3R3ATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V OptiMOS-T2
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
Suhu Hubungan Operasi -55°C to +175°C -55C to +175C
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Kemasan PG-TDSON-8-34 (TDSON-8) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) 100% avalanche-tested
RoHS Compliance Compliant (Green Product) Compliant (Green Package)
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Aras MSL — MSL1 (peak reflow up to 260C)
AEC-Q101 Qualification — Qualified (automotive grade)
Technology — Trench MOSFET (OptiMOS-T2)

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