IPC90N04S5L3R3ATMA1 vs IPD90N04S403ATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IPC90N04S5L3R3ATMA1 tarafından Infineon ve IPD90N04S403ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IPC90N04S5L3R3ATMA1 IPD90N04S403ATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V OptiMOS-T2
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 90 A —
On-Resistance RDS(on) max at VGS=10V 3.3 mΩ —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage VGS(th) 1.7 V to 2.7 V (logic level) —
Total Power Dissipation (TC=25°C) 62 W —
İşletim Jant Sıcaklığı -55°C to +175°C -55C to +175C
Storage Temperature Range [DATA_NEEDED: storage temp range] —
Paket PG-TDSON-8-34 (TDSON-8) PG-TO252-3-313 (DPAK)
Montaj Türü Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (per JEDEC J-STD-020) —
Peak Reflow Temperature 260°C —
Qualification AEC-Q101 automotive qualified —
Avalanche Tested 100% (production-level) 100% avalanche-tested
RoHS Compliance Compliant (Green Product) Compliant (Green Package)
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
MSL Seviyesi — MSL1 (peak reflow up to 260C)
AEC-Q101 Qualification — Qualified (automotive grade)
Technology — Trench MOSFET (OptiMOS-T2)

Dökümanlar & Kaynaklar

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