IPD031N03LGATMA1 vs IPD78CN10NGATMA1 Perbandingan

Perbandingan bersamaan detil IPD031N03LGATMA1 dari Infineon dan IPD78CN10NGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD031N03LGATMA1 IPD78CN10NGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 3 OptiMOS 2 Power-Transistor
Drain-to-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ 25 °C 90 A (Tc) —
Power Dissipation (Pd) 94 W (Tc) —
RDS(on) Max @ VGS=10V 3.1 mΩ —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: RDS(on) @ 4.5V] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/max] —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Charge (Qg) [DATA_NEEDED: Qg typical @ 10V Vgs] —
Output Charge (Qoss) Ultra low (per datasheet tagline) —
Suhu Kerja -55 °C to +175 °C (junction) —
Paket PG-TO252-3-11 (DPAK-2) —
Tipe Mounting Surface Mount Surface Mount
Mounting Tab Drain (electrically connected) —
Avalanche Energy Rated Yes (per OptiMOS 3 datasheet family) —
Status RoHS Compliant —
Level MSL 1 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Series — OptiMOS 2
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Tc=25C — 13 A
On-Resistance RDS(on) Max at VGS=10V — 78 mOhm
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) Max at Tc=25C — 31 W
Operating Junction Temperature Max — 175 C
Paket / Case — PG-TO252-3 (DPAK)
Jumlah Pin — 3 (Gate, Drain, Source) + Tab
Lead Plating — Pb-free (Matte Tin)
RoHS Compliance — Compliant
JEDEC Qualification — Qualified per JEDEC1 for target application

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