IPD034N06N3GATMA1 vs BSC094N06LS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPD034N06N3GATMA1 dari Infineon dan BSC094N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD034N06N3GATMA1 BSC094N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Technology N-Channel Trench MOSFET (OptiMOS 3) OptiMOS™ 5 (logic-level)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 100 A —
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Paket PG-TO252-3 (DPAK) PG-TDSON-8-6 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] —
Status RoHS Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W
Suhu Hubung Kerja — -55 °C to +150 °C

Spek dan Sumber

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