IPD034N06N3GATMA1 vs BSC094N06LS5ATMA1 Comparison
Detailed side-by-side comparison of IPD034N06N3GATMA1 by Infineon and BSC094N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1
BSC094N06LS5ATMA1 - 60V 9.4mΞ© 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 β ActiveSpecification Comparison
| Parameter | IPD034N06N3GATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | OptiMOSβ’ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Maximum Power Dissipation (Ptot) | 167 W | β |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | β |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | β |
| Package | PG-TO252-3 (DPAK) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | β |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | β |
| RoHS Status | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Part Number | β | BSC094N06LS5ATMA1 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | β | 9.4 mΞ© |
| RDS(on) max at VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25Β°C | β | 36 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |