IPD034N06N3GATMA1 vs BSC094N06LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD034N06N3GATMA1 sa pamamagitan ng Infineon at BSC094N06LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD034N06N3GATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | OptiMOS™ 5 (logic-level) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Power Dissipation (Ptot) | 167 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max] | — |
| Tindminan RoHS | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Part Number | — | BSC094N06LS5ATMA1 |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |