IPD034N06N3GATMA1 vs BSC094N06LS5ATMA1 比較

詳細並排比較 IPD034N06N3GATMA1 由 Infineon 與 BSC094N06LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ 啟用中

規格比較

參數 IPD034N06N3GATMA1 BSC094N06LS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Technology N-Channel Trench MOSFET (OptiMOS 3) OptiMOS™ 5 (logic-level)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 100 A —
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
封裝 PG-TO252-3 (DPAK) PG-TDSON-8-6 (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
工作溫度範圍 [DATA_NEEDED: Tj min/max] —
RoHS 狀態 Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Part Number — BSC094N06LS5ATMA1
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W
工作接面溫度 — -55 °C to +150 °C

資料表與資源

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