IPD034N06N3GATMA1 vs IAUC100N04S6L025ATMA1 Perbandingan
Perbandingan bersamaan detil IPD034N06N3GATMA1 dari Infineon dan IAUC100N04S6L025ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD034N06N3GATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 3) | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Power Dissipation (Ptot) | 167 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | — |
| Gate Threshold Voltage VGS(th) | 4 V at 93 uA | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | — |
| Paket | PG-TO252-3 (DPAK) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Pin Configuration | 3-Pin (2 + Tab) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj min/max] | — |
| Status RoHS | Compliant (Pb-free green finish) | Compliant |
| Automotive Qualified | Yes (per Infineon product page) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |