IPD052N10NF2SATMA1 vs BSC076N04NDATMA1 Perbandingan
Perbandingan bersamaan detil IPD052N10NF2SATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD052N10NF2SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD052N10NF2SATMA1 | — |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 17 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΩ @ VGS=10V, ID=70A | — |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84µA | — |
| Paket / Case | PG-TO252-3 (DPAK, SC-63) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Supplier Device Package | PG-TO252-3 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 °C to +175 °C (TJ) | — |
| Status RoHS | Compliant | — |
| Number of Channels | 1 | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |