IPD052N10NF2SATMA1 vs BSC076N04NDATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD052N10NF2SATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD052N10NF2SATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD052N10NF2SATMA1 | — |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | MOSFET (Metal Oxide), OptiMOS 5 100V | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Ta | 17 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 5.2 mΩ @ VGS=10V, ID=70A | — |
| Gate-Source Threshold Voltage (VGS(th)) Max | 3.8 V @ ID=84µA | — |
| Kemasan / Case | PG-TO252-3 (DPAK, SC-63) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Supplier Device Package | PG-TO252-3 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 °C to +175 °C (TJ) | — |
| Status RoHS | Compliant | — |
| Number of Channels | 1 | — |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |