IPD052N10NF2SATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD052N10NF2SATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD052N10NF2SATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD052N10NF2SATMA1 —
FET Type N-Channel 2x N-Channel MOSFET array
Technology MOSFET (Metal Oxide), OptiMOS 5 100V Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 17 A —
Continuous Drain Current (ID) at Tc 118 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 150 W —
Drain-Source On-Resistance (RDS(on)) Max 5.2 mΩ @ VGS=10V, ID=70A —
Gate-Source Threshold Voltage (VGS(th)) Max 3.8 V @ ID=84µA —
Packhaging / Kaso PG-TO252-3 (DPAK, SC-63) PG-TDSON-8-4 (SuperSO8, 5x6 mm)
Supplier Device Package PG-TO252-3 —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 °C to +175 °C (TJ) —
Tindminan RoHS Compliant —
Number of Channels 1 —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
RoHS / Pb-Free — Compliant (Pb-free plating)

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