IPD30N10S3L34ATMA1 vs IPD30N08S2L21ATMA1 Perbandingan

Perbandingan bersamaan detil IPD30N10S3L34ATMA1 dari Infineon dan IPD30N08S2L21ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD30N10S3L34ATMA1 IPD30N08S2L21ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 —
Tipe Transistor N-Channel Enhancement Mode MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID, Tc=25°C) 30 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc=25°C) 57 W —
Drain-Source On-Resistance (RDS(on) max) 31 mΩ @ VGS=10 V —
Gate-Source Threshold Voltage (VGS(th) typ) 1.7 V (range 1.0 V to 2.5 V) —
Total Gate Charge (Qg typ) 23 nC —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TO252-3-11 (DPAK-2 / SC-63) PG-TO252-3-11 (DPAK-2)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Level MSL 1 (JEDEC J-STD-020, 260°C peak reflow) 1
RoHS / REACH Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Avalanche Rated 100% Avalanche tested —
Series — OptiMOS
Continuous Drain Current (ID) at Tc=25C — 30 A
On-State Resistance (RDS(on)) at VGS=10 V — 26 milliohm (typ)
Gate Threshold Voltage (VGS(th)) — Logic-level (L series)
Gate Charge (Qg) typ — 56 nC
Power Dissipation (PD) at Tc=25C — 136 W
Rentang Suhu Kerja — -55C to +175C
Maximum Junction Temperature — +175C
Jumlah Pin — 3 (Drain tab + Gate + Source)
Status RoHS — Compliant

Spek dan Sumber

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