IPD30N10S3L34ATMA1 vs IPD30N08S2L21ATMA1 比較
詳細並排比較 IPD30N10S3L34ATMA1 由 Infineon 與 IPD30N08S2L21ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD30N10S3L34ATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| 電晶體類型 | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID, Tc=25°C) | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25°C) | 57 W | — |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | — |
| Total Gate Charge (Qg typ) | 23 nC | — |
| 工作接面溫度 | -55°C to +175°C | — |
| 封裝 | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK-2) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL 等級 | 1 (JEDEC J-STD-020, 260°C peak reflow) | 1 |
| RoHS / REACH | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| 工作溫度範圍 | — | -55C to +175C |
| Maximum Junction Temperature | — | +175C |
| 腳位數 | — | 3 (Drain tab + Gate + Source) |
| RoHS 狀態 | — | Compliant |