IPD30N10S3L34ATMA1 vs IPD30N08S2L21ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD30N10S3L34ATMA1 disebabkan oleh Infineon dan IPD30N08S2L21ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ AktifInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD30N10S3L34ATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Jenis Transistor | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID, Tc=25°C) | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25°C) | 57 W | — |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | — |
| Total Gate Charge (Qg typ) | 23 nC | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK-2) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Aras MSL | 1 (JEDEC J-STD-020, 260°C peak reflow) | 1 |
| RoHS / REACH | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Maximum Junction Temperature | — | +175C |
| Kiraan Pin | — | 3 (Drain tab + Gate + Source) |
| Status RoHS | — | Compliant |