IPD30N10S3L34ATMA2 vs IPD70N10S312ATMA2 Perbandingan
Perbandingan bersamaan detil IPD30N10S3L34ATMA2 dari Infineon dan IPD70N10S312ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD70N10S312ATMA2 - 100V 70A N-Ch OptiMOS Power MOSFET | Infineon
IPD70N10S312ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD30N10S3L34ATMA2 | IPD70N10S312ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS-T Power-MOSFET (N-Channel) |
| Automotive Qualification | AEC-Q101 | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (unlimited floor life) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD70N10S312ATMA2 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Rentang Suhu Kerja | — | -55C to +175C |
| Paket | — | PG-TO252-3-11 (DPAK) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Rated | — | Yes |