IPD30N10S3L34ATMA2 vs IPD70N10S312ATMA2 比較
詳細並排比較 IPD30N10S3L34ATMA2 由 Infineon 與 IPD70N10S312ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD30N10S3L34ATMA2 | IPD70N10S312ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, Tc) | 30 A | — |
| Pulsed Drain Current (I_DM) | 180 A | — |
| Power Dissipation (P_D, Tc) | 57 W | — |
| R_DS(on) max at V_GS=10V | 31 mOhm (typ) | — |
| Gate Threshold Voltage V_GS(th) max | 2.4 V | — |
| Total Gate Charge (Qg) max | 31 nC | — |
| 工作接面溫度 | -55 C to +175 C | — |
| Package / Supplier Device Package | PG-TO252-3-11 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Pin / Tab Count | 3 (2 + Tab) | — |
| Technology | OptiMOS-T (trench) | OptiMOS-T Power-MOSFET (N-Channel) |
| Automotive Qualification | AEC-Q101 | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (unlimited floor life) |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD70N10S312ATMA2 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Power Dissipation (Ptot, Tc=25C) | — | 125 W |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| 工作溫度範圍 | — | -55C to +175C |
| 封裝 | — | PG-TO252-3-11 (DPAK) |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Rated | — | Yes |