IPD35N10S3L26ATMA1 vs IPD30N08S2L21ATMA1 Perbandingan

Perbandingan bersamaan detil IPD35N10S3L26ATMA1 dari Infineon dan IPD30N08S2L21ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD35N10S3L26ATMA1 IPD30N08S2L21ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD35N10S3L26ATMA1 —
Technology OptiMOS-T (N-channel enhancement mode trench MOSFET) —
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at TC=25°C 35 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10 V 26 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.7 V —
Continuous Power Dissipation (PD) at TC=25°C 71 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) 1
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Tested 100% avalanche tested —
RoHS / Halogen-Free RoHS compliant, Green product (halogen-free) —
Typical Gate Charge (Qg) [DATA_NEEDED: typical Qg from datasheet] —
Series — OptiMOS
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C — 30 A
On-State Resistance (RDS(on)) at VGS=10 V — 26 milliohm (typ)
Gate Threshold Voltage (VGS(th)) — Logic-level (L series)
Gate Charge (Qg) typ — 56 nC
Power Dissipation (PD) at Tc=25C — 136 W
Rentang Suhu Kerja — -55C to +175C
Maximum Junction Temperature — +175C
Jumlah Pin — 3 (Drain tab + Gate + Source)
Status RoHS — Compliant

Spek dan Sumber

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