IPD35N10S3L26ATMA1 vs IPD30N08S2L21ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD35N10S3L26ATMA1 sa pamamagitan ng Infineon at IPD30N08S2L21ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 ✓ NakahandaInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD35N10S3L26ATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| Series | — | OptiMOS |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Maximum Junction Temperature | — | +175C |
| Bilang ng Pin | — | 3 (Drain tab + Gate + Source) |
| Tindminan RoHS | — | Compliant |