IPD35N10S3L26ATMA1 vs IPD30N08S2L21ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD35N10S3L26ATMA1 disebabkan oleh Infineon dan IPD30N08S2L21ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD35N10S3L26ATMA1 IPD30N08S2L21ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD35N10S3L26ATMA1 —
Technology OptiMOS-T (N-channel enhancement mode trench MOSFET) —
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at TC=25°C 35 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10 V 26 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.7 V —
Continuous Power Dissipation (PD) at TC=25°C 71 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan PG-TO252-3-11 (DPAK-2) PG-TO252-3-11 (DPAK-2)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260°C peak reflow) 1
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Avalanche Tested 100% avalanche tested —
RoHS / Halogen-Free RoHS compliant, Green product (halogen-free) —
Typical Gate Charge (Qg) [DATA_NEEDED: typical Qg from datasheet] —
Series — OptiMOS
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25C — 30 A
On-State Resistance (RDS(on)) at VGS=10 V — 26 milliohm (typ)
Gate Threshold Voltage (VGS(th)) — Logic-level (L series)
Gate Charge (Qg) typ — 56 nC
Power Dissipation (PD) at Tc=25C — 136 W
Gambaran Suhu Operasi — -55C to +175C
Maximum Junction Temperature — +175C
Kiraan Pin — 3 (Drain tab + Gate + Source)
Status RoHS — Compliant

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