IPD35N10S3L26ATMA1 vs IPD30N10S3L34ATMA2 Perbandingan
Perbandingan bersamaan detil IPD35N10S3L26ATMA1 dari Infineon dan IPD30N10S3L34ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD35N10S3L26ATMA1 | IPD30N10S3L34ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | OptiMOS-T (trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | -55 C to +175 C |
| Paket | PG-TO252-3-11 (DPAK-2) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (up to 260°C peak reflow) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| Pulsed Drain Current (I_DM) | — | 180 A |
| Power Dissipation (P_D, Tc) | — | 57 W |
| R_DS(on) max at V_GS=10V | — | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | — | 2.4 V |
| Total Gate Charge (Qg) max | — | 31 nC |
| Package / Supplier Device Package | — | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | — | 3 (2 + Tab) |
| Status RoHS | — | Compliant |