IPD35N10S3L26ATMA1 vs IPD30N10S3L34ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD35N10S3L26ATMA1 disebabkan oleh Infineon dan IPD30N10S3L34ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD35N10S3L26ATMA1 | IPD30N10S3L34ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD35N10S3L26ATMA1 | — |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | OptiMOS-T (trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 35 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | — |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | -55 C to +175 C |
| Kemasan | PG-TO252-3-11 (DPAK-2) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (up to 260°C peak reflow) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% avalanche tested | — |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | — |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| Pulsed Drain Current (I_DM) | — | 180 A |
| Power Dissipation (P_D, Tc) | — | 57 W |
| R_DS(on) max at V_GS=10V | — | 31 mOhm (typ) |
| Gate Threshold Voltage V_GS(th) max | — | 2.4 V |
| Total Gate Charge (Qg) max | — | 31 nC |
| Package / Supplier Device Package | — | PG-TO252-3-11 (DPAK) |
| Pin / Tab Count | — | 3 (2 + Tab) |
| Status RoHS | — | Compliant |