IPD5N25S3430ATMA1 vs IPB35N10S3L26ATMA1 Perbandingan

Perbandingan bersamaan detil IPD5N25S3430ATMA1 dari Infineon dan IPB35N10S3L26ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD5N25S3430ATMA1 IPB35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS (planar-trench) —
Drain-Source Voltage (VDS) 250 V —
Continuous Drain Current (ID, Tc=25°C) 5 A —
Pulsed Drain Current (IDM) 20 A —
RDS(on) max @ VGS=10V 430 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3 V typ / 4 V max —
Input Capacitance (Ciss) 422 pF typical —
Power Dissipation (PD, Tc=25°C) 41 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-TO252-3-313 (DPAK, surface mount) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS ROHS3 Compliant [DATA_NEEDED: RoHS status]
Lead Finish Matte Tin (lead-free) —
Level MSL 1 (per JEDEC J-STD-020) —
Configuration Single, 3-pin (2+Tab) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T
Channel Type — N-Channel
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Power Dissipation (PD) at TC — 71 W
Package Type — PG-TO263-3 (D2PAK-2)
Jumlah Pin — 3 (Gate, Drain, Source)
Channel Mode — Enhancement
RDS(on) (typical per Infineon product page) — 26.3 mΩ
Typical Gate Charge Qg @ Vgs — 80 nC
Maximum Drain-Source Resistance Rds — 1.7 mΩ (per RS Components listing)
Minimum Operating Temperature — -55 C
Maximum Power Dissipation Pd — 81 W (per RS Components listing)
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 qualification status]

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